Crystal growth of ultra-wide bandgap semiconductors AlN and β-Ga2O3 for application to optical and electronic devices

• Overview

  We are conducting research on high-speed growth of high-quality crystals of aluminum nitride (AlN) and gallium oxide (Ga₂O₃) crystals, which are ultra-wide bandgap (UWBG) semiconductor crystals, using our unique halide vapor phase epitaxy (HVPE) method. AlN is attracting attention as a substrate material for solid-state deep-UV (265 nm) light emitting devices for virus inactivation, but it is essential to realize high-speed growth of high-quality crystals for large-scale supply of substrates for its widespread use. In addition, for Ga₂O₃, which is attracting attention as a low-loss power device material, requires the development of high-speed growth and conductivity control technology for its high-purity crystals. Our research team aims to promote these studies to accelerate device applications together with researchers at overseas researhttps://en.tuat-global.jp/wp-admin/ch institutes who are studying gallium nitride (GaN) crystal growth by the HVPE method.

  

Members

Hisashi Murakami (Institute of Engineering / Associate Professor)
Ken Goto (Institute of Engineering / Assistant Professor)