KUMAGAI Yoshinao

Professional Career

1996.04 - 1999.03 : Researcher, Advance Materials & Processes Laboratory, Tsukuba Research & Development Center Ltd., Texas Instruments Incorporated
1999.04 - 2001.07 : Assistant, Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology
2001.08 - 2004.03 : Senior Assistant Professor, Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology
2004.04- 2013.11 : Associate Professor, Department of Applied Chemistry, Institute of Engineering, Tokyo University of Agriculture and Technology
2013.12 - present : Professor, Department of Applied Chemistry, Institute of Engineering, Tokyo University of Agriculture and Technology

Academic Degrees

1996年　Ph.D. in Engineering, University of Tsukuba

Research Interests

Crystal growth, Growth from vapor phase, Epitaxy, Nitride semiconductors, Oxide semiconductors

Publications

• Kumagai, Y., Goto, K., Nagashima, T., Yamamoto, R., Boćkowski, M., Kotani, J., Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy. Applied Physics Express (Appl. Phys. Express) 15: 115501 1-4, 2022
• Nakahata, H., Togashi, R., Goto, K., Monemar, B., Kumagai, Y., Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates, Journal of Crystal Growth (J. Cryst. Growth)., 563: 126111 1-6, 2021
• Wong, M. H., Murakami, H., Kumagai, Y., Higashiwaki, M., Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs, Applied Physics Letters (Appl. Phys. Lett.)., 118: 012102 1-6, 2021
• Mishra, A., Moule, T., Uren, M. J., Wong, M. H., Goto, K., Murakami, H., Kumagai, Y., Higashiwaki, M., Kuball, M. Characterization of trap states in buried nitrogen-implanted β-Ga2O3. Applied Physics Letters (Appl. Phys. Lett.)., 117: 243505 1-7, 2020
• Goto, K., Takekawa, N., Nagashima, T., Yamamoto, R., Pozina, G., Dalmau, R., Schlesser, R., Collazo, R., Monemar, B., Sitar, Z., Boćkowski, M., Kumagai, Y. Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers. Physica Status Solidi (a) (Phys. Stat. Sol. (a))., 217: 2000465 1-7, 2020
• Son, N. T., Ho, Q. D., Goto, K., Abe, H., Ohshima, T., Monemar, B., Kumagai, Y., Frauenheim, T., Deák, P. Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3. Applied Physics Letters (Appl. Phys. Lett.)., 117: 032101 1-5, 2020
• Yamamoto, R., Takekawa, N., Goto, K., Nagashima, T., Dalmau, R., Schlesser, R., Murakami, H., Collazo, R., Monemar, B., Zlatko Sitar, Kumagai, Y. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas. Journal of Crystal Growth (J. Cryst. Growth)., 545: 125730 1-6, 2020
• Liu, Q., Fujimoto, N., Shen, J., Nitta, S., Tanaka, A., Honda, Y., Sitar, Z., Boćkowski, M., Kumagai, Y., Amano, H. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices. Journal of Crystal Growth (J. Cryst. Growth)., 539: 125643 1-6, 2020
• Korlacki, R., Mock, A., Briley, C., Darakchieva, V., Monemar, B., Kumagai, Y., Goto, K., Higashiwaki, M., Schubert, M. Comment on “Characteristics of Multi-photon Absorption in a β-Ga2O3 Single Crystal” [J. Phys. Soc. Jpn. 88, 113701 (2019)]. Journal of the Physical Society of Japan (J. Phys. Soc. Jpn.)., 89: 036001 1-2, 2020
• De Santi, C., Nardo, A., Wong, M.H., Goto, K., Kuramata, A., Yamakoshi, S., Murakami, H., Kumagai, Y., Higashiwaki, M., Meneghesso, G., Zanoni, E., Meneghini, M. Stability and degradation of isolation and surface in Ga2O3 devices. Microelectronics Reliability (Microelectron. Rel.). 100-101: 113453 1-4, 2019
• Yoshida, K., Yamanobe, S., Konishi, K., Takashima, S., Edo, M., Monemar, B., Kumagai, Y. Dependence of thermal stability of GaN on substrate orientation and off-cut. Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.). 58.C
• Goto, K., Konishi, K., Murakami, H., Kumagai, Y., Monemar, B., Higashiwaki, M., Kuramata, A., Yamakoshi, S. Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties. Thin Solid Films (Thin Solid Films) 666: 182-184, 2018.
• Z. Li, R. Mogensen, J. Mindemark, T. Bowden, D. Brandell, Y. Tominaga, Ion-conductive and thermal properties of a synergistic poly(ethylene carbonate)/poly(trimethylene carbonate) blend electrolyte. Macromolecular Rapid Communications (Macromol. Rapid Commun.). 39, 1800146, 2018
• Erdenedavaa Purevdalai, Antonio Rosato, Amarbayar Adiyabat, Atsushi Akisawa, Sergio Sibilio, Antonio Ciervo, Model Analysis of Solar Thermal System with the Effect of Dust Deposition on the Collectors, Energies, 11(7): 1795, 2018; doi:10.3390/en11071795.
• Rounds, R., Sarkar, B., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., Franke, A., Bickermann, M., Kumagai, Y., Sitar, Z., Collazo, R. Thermal conductivity of single-crystalline AlN. Applied Physics Express (Appl. Phys. Express). 11: 071001 1-3, 2018
• Konishi, K., Goto, K., Togashi, R., Murakami, H., Higashiwaki, M., Kuramata, A., Yamakoshi, S., Monemar, B., Kumagai, Y. Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy. Journal of Crystal Growth (J. Cryst. Growth). 492: 39-44, 2018
• Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., Franke, A., Bickermann, M., Kumagai, Y., Sitar, Z., Collazo, R. The influence of point defects on the thermal conductivity of AlN crystals. Journal of Applied Physics (J. Appl. Phys.). 123: 185107 1-7, 2018