MURAKAMI Hisashi

Professional Career

2003 - 2005 : JSPS Research Fellow (DC2)
2005.04 - 2007.03 : Assistant, Institute of Engineering, Tokyo University of Agriculture and Technology
2008.09 - 2009.02 : Visiting Researcher, Linköping University (Sweden)
2007.04 - 2011.11 : Assistant, Institute of Engineering, Tokyo University of Agriculture and Technology
2011.12- present : Associate Professor, Institute of Engineering, Tokyo University of Agriculture and Technology

Academic Degrees

2002　Ms.C. in Engineering, Tokyo University of Agriculture and Technology
2005　Ph.D. in Engineering, Tokyo University of Agriculture and Technology

Research Interests

Crystal Growth, Epitaxial Growth

Publications

• Wong, M. H., Murakami, H., Kumagai, Y., Higashiwaki, M., Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs, Applied Physics Letters (Appl. Phys. Lett.)., 118: 012102 1-6, 2021
• Mishra, A., Moule, T., Uren, M. J., Wong, M. H., Goto, K., Murakami, H., Kumagai, Y., Higashiwaki, M., Kuball, M. Characterization of trap states in buried nitrogen-implanted β-Ga2O3. Applied Physics Letters (Appl. Phys. Lett.)., 117: 243505 1-7, 2020
• Yamamoto, R., Takekawa, N., Goto, K., Nagashima, T., Dalmau, R., Schlesser, R., Murakami, H., Collazo, R., Monemar, B., Zlatko Sitar, Kumagai, Y. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas. Journal of Crystal Growth (J. Cryst. Growth)., 545: 125730 1-6, 2020
• De Santi, C., Nardo, A., Wong, M.H., Goto, K., Kuramata, A., Yamakoshi, S., Murakami, H., Kumagai, Y., Higashiwaki, M., Meneghesso, G., Zanoni, E., Meneghini, M. Stability and degradation of isolation and surface in Ga2O3 devices. Microelectronics Reliability (Microelectron. Rel.). 100-101: 113453 1-4, 2019
• Goto, K., Konishi, K., Murakami, H., Kumagai, Y., Monemar, B., Higashiwaki, M., Kuramata, A., Yamakoshi, S. Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties. Thin Solid Films (Thin Solid Films) 666: 182-184, 2018.
• Konishi, K., Goto, K., Togashi, R., Murakami, H., Higashiwaki, M., Kuramata, A., Yamakoshi, S., Monemar, B., Kumagai, Y. Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy. Journal of Crystal Growth (J. Cryst. Growth). 492: 39-44, 2018