|Affiliation||Institute of Engineering|
【ENERGY】 Kumagai Unit
To realize an energy saving society, high-speed growth of wide bandgap semiconductor crystals, aluminum nitride (AlN) and gallium oxide (Ga2O3), by vapor phase epitaxy is investigated to apply them for the fabrication of next-generation high-power electronic devices and high electron mobility transistors. The research will be conducted in collaboration with researchers belonging to the Polish Academy of Sciences.
|Affiliation||Polish Academy of Sciences (PAS) (Poland)|
|Division / Department||Institute of High Pressure Physics,|