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Growth of wide-bandgap semiconductor crystals for realization of high-efficiency power devices

【ENERGY】 Kumagai Unit

  • Overview

    To realize an energy saving society, high-speed growth of wide bandgap semiconductor crystals, aluminum nitride (AlN) and gallium oxide (Ga2O3), by vapor phase epitaxy is investigated to apply them for the fabrication of next-generation high-power electronic devices and high electron mobility transistors. The research will be conducted in collaboration with researchers belonging to the Polish Academy of Sciences.

Team Head

International Researcher(s)

Michał Boćkowski

Affiliation Polish Academy of Sciences (PAS) (Poland)
Division / Department Institute of High Pressure Physics,
Position Professor
URL

https://www.unipress.waw.pl/growth/

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